PART |
Description |
Maker |
1N4148D2B-JQRS.GRPC 1N4148D2A |
0.2 A, 75 V, SILICON, SIGNAL DIODE HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN SILICON EPITAXIAL PLANAR DIODE
|
TT electronics Semelab, Ltd. Seme LAB
|
MEK600-04DA |
HiPerFRED Epitaxial Diode dual diode, common cathode 880 A, 400 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp. IXYS[IXYS Corporation]
|
1S1555 1S1553 1S1554 |
Silicon epitaxial planar type diode. Silicon Epitaxial Planner Type Diode
|
Panasonic TOSHIBA[Toshiba Semiconductor]
|
1SV257 |
RF Varactor Diodes Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管(用于UHF波段无线电台 Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation Toshiba Semiconductor
|
KDV152 KDV152M |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB/C/P PLL) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB,C/P PLL) 变容二极管外延硅平面二极管(振荡器的文件,碳/磷锁相环
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE 650 A, 1200 V, SILICON, RECTIFIER DIODE 1520 A, 5800 V, SILICON, RECTIFIER DIODE 1610 A, 4200 V, SILICON, RECTIFIER DIODE 5100 A, 3000 V, SILICON, RECTIFIER DIODE 5100 A, 3200 V, SILICON, RECTIFIER DIODE 1030 A, 3600 V, SILICON, RECTIFIER DIODE 2050 A, 2800 V, SILICON, RECTIFIER DIODE 1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
DSEC29-02A DSEC29-02AS |
HiPerFRED Epitaxial Diode with common cathode and soft recovery 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB HiPerFRED Epitaxial Diode with common cathode and soft recovery 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC Fast Recovery Diodes
|
IXYS, Corp. IXYS Corporation
|
APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247 Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo... Microsemi, Corp. ADPOW[Advanced Power Technology]
|
DSEP40-03AS |
HiPerFRED Epitaxial Diode with soft recovery 40 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
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